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ATP405 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP405 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() ATP405 No. A1458-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=10V, ID=20A 62 S Static Drain-to-Source On-State Resistance RDS(on) ID=20A, VGS=10V 25 33 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 4000 pF Output Capacitance Coss VDS=20V, f=1MHz 300 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 170 pF Turn-ON Delay Time td(on) See specified Test Circuit. 38 ns Rise Time tr See specified Test Circuit. 125 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 220 ns Fall Time tf See specified Test Circuit. 150 ns Total Gate Charge Qg VDS=60V, VGS=10V, ID=40A 68 nC Gate-to-Source Charge Qgs VDS=60V, VGS=10V, ID=40A 14 nC Gate-to-Drain “Miller” Charge Qgd VDS=60V, VGS=10V, ID=40A 15 nC Diode Forward Voltage VSD IS=40A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit Avalanche Resistance Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 0.4 0.55 13 2 6.5 0.6 4 0.8 1.5 0.4 2.6 4.6 0.4 2.3 2.3 PW=10μs D.C.≤1% P.G 50Ω G S D ID=20A RL=3Ω VDD=60V VOUT ATP405 VIN 10V 0V VIN 50Ω 10V 0V ≥50Ω VDD L ATP405 |
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