STFV3N150 datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STFV3N150, STFW3N150, STP3N150, STW3N150

Electrical ratings

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220,TO-247

TO-220FH TO-3PF

VDS

Drain-source voltage (VGS = 0)

1500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

2.5

2.5 (1)

Limited by maximum temperature allowed

2.5(1)

Drain current (continuous) at TC = 100 °C

1.6

1.6 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

10 (1)

PTOT

Total dissipation at TC = 25 °C

140

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;TC=25 °C)

2500

TBD

Derating factor

1.12

0.24

0.67

W/°C

Tstg

Storage temperature

-50 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220

TO-247 TO-220FH TO-3PF

Unit

Rthj-case Thermal resistance junction-case max

0.89

4.17

1.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

max

62.5

°C/W

Maximum lead temperature for

soldering purpose

300

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2.5

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

450

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