STP3N150 datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STP3N150

Description	N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH??Power MOSFET

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 16 page

February 2009

Rev 6

1/16

16

STFV3N150 , STFW3N150

STP3N150, STW3N150

N-channel 1500 V, 6

Ω, 2.5 A, PowerMESH™ Power MOSFET

TO-220, TO-220FH, TO-247, TO-3PF

Features

■ 100% avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF and TO-220FH plastic

packages

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

■ Creepage distance path is > 4 mm for

TO-220FH

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

company’s proprietary edge termination structure,

gives the lowest RDS(on) per area, unrivalled gate

charge and switching characteristics.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on) max

ID

Pw

STFV3N150

STFW3N150(1)

STP3N150

STW3N150

1.

All data which refers solely to the TO-3PF package is

preliminary

1500 V

< 9

Ω

< 9

Ω

< 9

Ω

< 9

Ω

2.5 A

30 W

83 W

140 W

TO-220

TO-220FH

1

2

3

1

2

3

TO-247

1

2

3

1

2

3

TO-3PF

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STFV3N150

3N150

TO-220FH

Tube

STFW3N150

3N150

TO-3PF

Tube

STP3N150

3N150

TO-220

Tube

STW3N150

3N150

TO-247

Tube

www.st.com

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STP3N150 Datasheet(PDF) 1 Page - STMicroelectronics

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