BDB01C,D

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BDB01A

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

LIMIT

100

µs

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

dc

dc

DUTY CYCLE

≤ 10%

BDB01B

BDB01C

BDB01D

IC, COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

–0.8

–2.8

1.0

100

10

θVB for VBE

0.5

2.0

5.0

20

50

200

–1.2

–1.6

–2.0

–2.4

500

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100

50

20

10

5.0

2.0

1.0

0.5

0.2

0.1

80

60

40

20

10

4.0

TJ = 25°C

Cobo

Cibo

8.0

6.0

Figure 6. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

200

70

50

30

20

10

7.0

5.0

3.0

2.0

300

200

100

70

50

30

VCE = 2.0 V

TJ = 25°C

100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2 k

1.0

2.0

5.0

Figure 7. Active Region–Safe Operating Area

500

200

100

50

20

10

10

20

60 80 100

1 k

45