BDC01D

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

(IC = 500 mA, VCE = 2.0 V)

hFE

40

25

400

—

—

Collector – Emitter Saturation Voltage(1)

(IC = 1000 mA, IB = 100 mA)

VCE(sat)

—

0.7

Vdc

Collector – Emitter On Voltage(1)

(IC = 1000 mA, VCE = 1.0 V)

VBE(on)

—

1.2

Vdc

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)

fT

50

—

MHz

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Cob

—

30

pF

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

200

100

80

60

40

TJ = 125°C

25

°C

–55

°C

VCE = 1.0 V

300

500

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

1.0

0.8

0.6

0.4

0.2

0

0.1

10

1.0

TJ = 25°C

IC = 10 mA

0.05

0.2

0.5

2.0

5.0

20

100 mA

250 mA

50

mA

50

500 mA

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

1.0

0.8

0.6

0.4

0.2

0

0.5

1.0

200

20

TJ = 25°C

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

5.0

10

50

100

VBE(sat) @ IC/IB = 10

2.0

500