BDB02C,D

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

–0.5

–0.7

–1.0

–2.0

–3.0

–5.0

–7.0

–10

–20

–30

–50

–70

–100

–200

200

100

80

60

40

TJ = 125°C

25

°C

–55

°C

VCE = –1.0 V

–300

–500

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

–1.0

–0.8

–0.6

–0.4

–0.2

0

–0.1

–10

–1.0

TJ = 25°C

IC = –10 mA

–0.05

–0.2

–0.5

–2.0

–5.0

–20

–50

–100 mA

–250 mA

–500 mA

–50

mA

IC, COLLECTOR CURRENT (mA)

Figure 3. On Voltages

–1.0

–0.8

–0.6

–0.4

–0.2

0

TJ = 25°C

VBE(on) @ VCE = –1.0 V

VCE(sat) @ IC/IB = 10

–0.5

VBE(sat) @ IC/IB = 10

–1.0

–2.0

–5.0

–10

–20

–50

–100

–200

–500

IC, COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

–0.8

–2.8

–1.0

–100

–10

θVB for VBE

–0.5

–2.0

–5.0

–20

–50

–200

–1.2

–1.6

–2.0

–2.4

–500

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

–100

–50

–20

–10

–5.0

–2.0

–1.0

–0.5

–0.2

–0.1

100

70

50

30

20

5.0

TJ = 25°C

Cobo

Cibo

10

7.0