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UCC5640 Datasheet(PDF) 1 Page - Texas Instruments

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Part # UCC5640
Description  Low Voltage Differential LVD SCSI 9 Line Terminator
PDF  10 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

UCC5640 Datasheet(HTML) 1 Page - Texas Instruments

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UCC5640
SLUS314C – JANUARY 2000 – REVISED JUNE 2003
LOW VOLTAGE DIFFERENTIAL (LVD) SCSI 9LINE TERMINATOR
1
www.ti.com
FEATURES
D First LVD only Active Terminator
D Meets SCSI SPI-2 Ultra2 (Fast-40), SPI-3 Ultra3
/ Ultra160 (Fast-80) and SPI-4 (Fast-160)
Ultra320 Standards
D 2.7-V to 5.25-V Operation
D Differential Failsafe Bias
DESCRIPTION
The UCC5640 is an active terminator for low voltage
differential (LVD) SCSI networks. This LVD only design
allows the user to reach peak bus performance while
reducing system cost. The device is designed as an
active Y-terminator to improve the frequency response
of the LVD bus. Designed with a 1.5-pF channel
capacitance, the UCC5640 allows for minimal bus
loading for a maximum number of peripherals. With the
UCC5640, the designer will be able to comply with the
Fast-40 SPI-2, Fast-80 SPI-3 and Fast-160 SPI-4
specifications. The UCC5640 also provides a much
needed system migration path for ever improving SCSI
system standards. This device is available in the 24-pin
TSSOP and 28-pin TSSOP for ease of layout use.
The UCC5640 is not designed for use in single ended
(SE) or high voltage differential (HVD) systems.
BLOCK DIAGRAM
UDG–98181
REF 1.25V
15
DISCNCT
27
LVD*
1
REG
11
DIFFB
4
L1–
3
L1+
26
L9–
25
L9+
56mV
SOURCE/SINK REGULATOR
REF 1.3V
1.3V + 0.1V
0.7V > 0.5V
2.4V > 1.9V
HIGH IMPEDANCE RECEIVER
EVEN WITH POWER OFF
SINGLE
ENDED
HIGH POWER
DIFFERENTIAL
12
DIFSENS
SOURCE 5– 15mA
SINK 200 µA MAXIMUM (NOISE LOAD)
OPEN CIRCUIT ON POWER OFF
OR OPEN CIRCUIT IN A
DISABLED TERMINATOR MODE
10µA
28
TRMPWR
124
124
52
52
52
52
14
GND
2.7V to 5.25V
56mV
+
–
–
+
56mV
+
–
56mV
–
+
*28 pin package only
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
 2003, Texas Instruments Incorporated


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