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APT50GS60SR Datasheet(PDF) 3 Page - Microsemi Corporation

Part # APT50GS60SR
Description  Thunderbolt High Speed NPT IGBT
PDF  7 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT50GS60SR Datasheet(HTML) 3 Page - Microsemi Corporation

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V
CE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
FIGURE 2, Output Characteristics
V
GE, GATE-TO-EMITTER VOLTAGE (V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
T
J, Junction Temperature (°C)
GATE CHARGE (nC)
FIGURE 5, On State Voltage vs Junction Temperature
FIGURE 6, Gate Charge
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
FIGURE 8, DC Collector Current vs Case Temperature
0
1
2
3
4
5
6
0
5
10
15
20
25
30
0
2
4
6
8
10
12
6
8
10
12
14
16
0
25
50
75
100
125
150
0
50
100
150
200
250
0
100
200
300
400
500
600
25
50
75
100
125
150
150
125
100
75
50
25
0
150
125
100
75
50
25
0
5
4
3
2
1
0
5000
1000
100
10
250
225
200
175
150
125
100
75
50
25
0
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
100
90
80
70
60
50
40
30
20
10
0
V
CE = 480V
V
CE = 300V
V
CE = 120V
250µs PULSE
TEST<0.5 % DUTY
CYCLE
11V
9V
8V
7V
10V
6V
T
J = 125°C
T
J = 25°C
I
C = 25A
I
C = 50A
I
C = 100A
V
GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 100A
I
C = 50A
I
C = 25A
VGE = 15V
T
J = 125°C
T
J = 25°C
T
J = 150°C
TJ = 125°C
IC = 25A
TJ = 25°C
T
J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
C
oes
C
ies
C
res
VGE = 13 & 15V
TYPICAL PERFORMANCE CURVES
APT50GS60B_SR(G)



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