BS170

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. Switching Test Circuit

20 dB

50

Ω ATTENUATOR

PULSE GENERATOR

+25 V

Vin

40 pF

1.0 M

Ω

50

Ω

125

Ω

50

Ω

Vout

TO SAMPLING SCOPE

50

Ω INPUT

OUTPUT

INVERTED

INPUT

PULSE

WIDTH

10%

50%

10%

90%

90%

toff

ton

Figure 2. Switching Waveforms

RESISTIVE SWITCHING

(Vin Amplititude 10 Volts)

Vin

Vout

2.0

1.6

1.2

0.8

0.4

0

50

150

050

100

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)

0.8

0.4

1.2

2.0

1.6

1.0

2.0

3.0

4.0

0

VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)

0.8

0.4

1.2

1.6

2.0

010

20

30

VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)

010

20

30

40

50

60

40

20

80

100

40

60

Figure 3. VGS(th) Normalized versus Temperature

Figure 4. On–Region Characteristics

Figure 5. Output Characteristics

Figure 6. Capacitance versus

Drain–To–Source Voltage

VGS = 10 V

VGS = 0 V

Ciss

Coss

Crss

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

VDS = VGS

ID = 1.0 mA

VGS = 10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V