MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Average Forward Current

IO

200

mA

Forward Surge Current, tp=8.3ms

IFSM

600

mA

Power Dissipation

PD

100

mW

Operating and Storage

Junction Temperature

TJ, Tstg

-65 to +125

°C

Thermal Resistance

ΘJA

1000

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=30V

25

200

nA

BVR

IR=10µA40

V

VF

IF=1.0mA

0.35

0.38

V

VF

IF=15mA

0.55

0.65

V

VF

IF=40mA

0.77

1.00

V

CT

VR = 0V, f=1.0 MHz

5.0

pF

trr

IF=IR=10mA, Irr=1.0mA, RL=100Ω

5.0

ns

CMASH-4

SURFACE MOUNT

SILICON SCHOTTKY DIODE

SOD-923 CASE

Central

Semiconductor Corp.

TM

R0 (13-February 2007)

DESCRIPTION:

The Central Semiconductor Corp. CMASH-4 is a high

quality Schottky Diode designed for applications where

very small size and operational efficiency are prime

requirements.

MARKING CODE: A

FEATURES:

Current (IO=200mA)

Low Forward Voltage Drop (VF=0.35V TYP @ 1.0mA)

Low Reverse Current (25nA TYP @ 30V)

Extremely Fast Switching (5ns Max)

Miniture, 0.8 x 0.6 x 0.4mm, ultra low height profile

FEMTOmini

APPLICATIONS:

DC / DC Converters

Voltage Clamping

Protection Circuits

Battery powered applications including Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc.