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SEMICONDUCTOR

TECHNICAL DATA

BAV70T

SILICON EPITAXIAL PLANAR DIODE

Revision No : 1

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

: ESM.

MAXIMUM RATING (Ta=25℃)

DIM

MILLIMETERS

A

B

D

E

ESM

1.60 0.10

0.85 0.10

0.70 0.10

0.27+0.10/-0.05

1.60 0.10

1.00 0.10

0.50

0.13 0.05

C

G

H

J

1

3

2

E

B

D

J

1. ANODE 1

2. ANODE 2

3. CATHODE

3

2

1

+_

+_

+_

+_

+_

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Marking

H 2

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

85

V

Reverse Voltage

80

V

Continuous Forward Current

150

mA

Surge Current (10ms)

2

A

Power Dissipation

200 *

mW

Junction Temperature

150

℃

Storage Temperature Range

-55～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

-

0.60

-

V

-

0.72

-

-

-

1.25

Reverse Current

-

-

0.5

μA

Total Capacitance

-

-

3.0

pF

Reverse Recovery Time

-

-

4.0

nS

Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm)