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MJ13100 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ13100
Description  Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ13100 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
MJ13100/13101
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)—MJ13100
= 450V(Min)—MJ13101
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
MJ13100
650
VCEV
Collector-Emitter Voltage
MJ13101
750
V
MJ13100
400
VCEO(SUS)
Collector-Emitter Voltage
MJ13101
450
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
50
A
IB
B
Base Current-Continuous
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation@TC=25℃
175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W
isc Website：www.iscsemi.cn


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