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MJ15012 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ15012
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ15012 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
MJ15012
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE= 20(Min.)@IC = -2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -4A
·Complement to Type MJ15011
APPLICATIONS
·Designed for high power audio, disk head positioners , and
other linear applications.
These devices can also be used
in power switching circuits such as relay or solenoid drivers,
DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO(SUS)
Collector-Emitter Voltage
-250
V
VCEX
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
B
Base Current-Continuous
-2
A
IBM
Base Current-Peak
-5
A
IE
Emitter Current-Continuous
12
A
IEM
Emitter Current-Peak
20
A
PD
Total Power Dissipation@TC=25℃
200
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website：www.iscsemi.cn


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