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Motorola Bipolar Power Transistor Device Data

SWITCHMODE Series

NPN Silicon Power Transistors

The BUS50 transistor is designed for low voltage, high–speed, power switching in

inductive circuits where fall time is critical. It is particularly suited for battery

switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

Fast Turn–Off Times

300 ns Inductive Fall Time – 25

_C (Typ)

Operating Temperature Range – 65 to + 200

_C

MAXIMUM RATINGS

Rating

Symbol

BUS50

Unit

Collector–Emitter Voltage

VCEO(sus)

125

Vdc

Collector–Emitter Voltage

VCEV

200

Vdc

Emitter Base Voltage

VEB

7

Vdc

Collector Current — Continuous

— Peak (1)

— Overload

IC

ICM

IoI

70

140

Adc

Base Current — Continuous

— Peak (1)

IB

IBM

20

Adc

Total Power Dissipation — TC = 25°C

— TC = 100°C

Derate above 25

_C

PD

350

200

2

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.5

_C/W

Maximum Lead Temperature

for Soldering Purposes:

1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

x10%.

SWITCHMODE is a trademark of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUS50/D

BUS50

70 AMPERES

NPN SILICON

POWER TRANSISTOR

125 VOLTS (BVCEO)

350 WATTS

200 V (BVCES)

CASE 197A–05

TO–204AE

REV 7