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AS58C1001 Datasheet(PDF) 1 Page - Austin Semiconductor

Part # AS58C1001
Description  128K x 8 EEPROM EEPROM Memory
PDF  21 Pages
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Manufacturer  AUSTIN [Austin Semiconductor]
Direct Link  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

AS58C1001 Datasheet(HTML) 1 Page - Austin Semiconductor

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EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
AS58C1001
AS58C1001
Rev. 5.5 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
For more products and information
please visit our web site at
www.austinsemiconductor.com
128K x 8 EEPROM
EEPROM Memory
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38267
MIL-STD-883
FEATURES
High speed: 150, 200, and 250ns
Data Retention: 10 Years
Low power dissipation, active current (20mW/MHz (TYP)),
standby current (100
μW(MAX))
Single +5V (+10%) power supply
Data Polling and Ready/Busy Signals
Erase/Write Endurance (10,000 cycles in a page mode)
Software Data protection Algorithm
Data Protection Circuitry during power on/off
Hardware Data Protection with RES pin
Automatic Programming:
Automatic Page Write: 10ms (MAX)
128 Byte page size
OPTIONS
MARKINGS
Timing
150ns access
-15
200ns access
-20
250ns access
-25
Packages
Ceramic Flat Pack
F
No. 306
Radiation Shielded Ceramic FP* SF
No. 305
Ceramic SOJ
DCJ No. 508
Plastic SOP
DG
Operating Temperature Ranges
-Military (-55oC to +125oC)
XT
-Industrial (-40oC to +85oC)
IT
*NOTE: Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS58C1001 is capable or in
system electrical Byte and Page reprogrammability.
The AS58C1001 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and circuitry
technology and CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make its
erase and write operations faster. The AS58C1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection.
Hardware data protection is provided with the RES pin, in addition to
noise protection on the WE signal and write inhibit during power on
and off. Software data protection is implemented using JEDEC
Optional Standard algorithm.
The AS58C1001 is designed for high reliability in the most
demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles in
the Page Mode.
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ),
32-Pin SOP (DG)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3


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