3

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com

SP3070E-SP3078E_100_061109

These are stress ratings only and functional operation of the device at these

ratings or any other above those indicated in the operation sections of the

specifications below is not implied. Exposure to absolute maximum rating

conditions for extended periods of time may affect reliability.

V

Input Voltage at control input pins (RE, DE).........................-0.3V to 6V

Driver Input Voltage (RE, DE)...............................................-0.3V to 6V

Driver Output Voltage (A, B, Y, & Z)....................................-8V to +13V

Receiver Input Voltage (A, B)..............................................-8V to +13V

Continuous Power Dissipation at T

o

C

ElECTRICal CHaRaCTERISTICS

aBSOluTE MaXIMuM RaTINGS

Unless otherwise noted V

ambient temperature T

less otherwise noted.

Operating Temperature Ranges

SP307XE_MN..............................................................-40ºC to +125ºC

SP307XE_EN ................................................................-40ºC to +85ºC

Junction Temperature.................................................................+150ºC

Storage Temperature Range.......................................-65ºC to +150º C

Lead Temperature (soldering, 10s) ..........................................+300º C

PARAMETER

SYM.

MIN. TYP. MAX. UNITS ♦

CONDITIONS

Differential Driver Output

V

OD

2

V

CC

V

RL = 100Ω (RS-422), Figure 1

1.5

V

CC

RL = 54Ω (RS-485), Figure 1

V

CC

♦

No Load

Change in Magnitude of

Differential Output Voltage

∆ V

OD

0.2

V

♦

RL = 54 or 100Ω, Figure 1

Driver Common Mode Output

Voltage

V

OC

V

3

V

♦

RL = 54 or 100Ω, Figure 1

Change in Magnitude of

Common Mode Output

Voltage

∆ V

OC

±0.2

V

RL = 54 or 100Ω, Figure 1

Input High Voltage

V

IH

2

V

♦

DE, DI, RE

Input Low Voltage

V

IL

0.8

V

DE, DI, RE

Input Hysteresis

V

HYS

100

mV

♦

DE, DI, RE

Input Current

I

IN

-1

1

µA

♦

DE, DI, RE

Input Impedance First

Transition (Hotswap)

1

10

kΩ

♦

DE, RE

First transition will draw more

current (Hotswap)

Output Leakage (Y and Z)

Full Duplex (A and B)

I

O

+125

µA

♦

DE = GND

V

V

-100

♦

V

Driver Short-Circuit Current

I

OSD

0

±250

mA

-7V ≤ V

-250

0