1

Motorola Thyristor Device Data

Silicon Controlled Rectifier

Reverse Blocking Triode Thyristors

. . . Glassivated PNPN devices designed for high volume consumer applications such

as temperature, light, and speed control; process and remote control, and warning

systems where reliability of operation is important.

• Glassivated Surface for Reliability and Uniformity

• Power Rated at Economical Prices

• Practical Level Triggering and Holding Characteristics

• Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

Rating

Symbol

Value

Unit

Peak Repetitive Forward and Reverse Blocking Voltage(1)

(RGK = 1 kΩ)

C106F

(TC = –40° to 110°C)

C106A

C106B

C106D

C106M

VDRM

or

VRRM

50

100

200

400

600

Volts

RMS Forward Current

(All Conduction Angles)

IT(RMS)

4

Amps

Average Forward Current

(TA = 30°C)

IT(AV)

2.55

Amps

Peak Non-repetitive Surge Current

(1/2 Cycle, 60 Hz, TJ = –40 to +110°C)

ITSM

20

Amps

Circuit Fusing (t = 8.3 ms)

I2t

1.65

A2s

Peak Gate Power

PGM

0.5

Watt

Average Gate Power

PG(AV)

0.1

Watt

Peak Forward Gate Current

IGFM

0.2

Amp

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however,

(cont.)

positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a

constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by C106/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

C106

Series

CASE 77-08

(TO-225AA)

STYLE 2

SCRs

4 AMPERES RMS

50 thru 600 VOLTS

K

A

G

K

A

G

A

*Motorola preferred devices

*