ST2301SRG datasheet(3/6 Pages) STANSON

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ST2301A

P Channel Enhancement Mode MOSFET

-3.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2301A 2005. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-20

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-0.45

-1.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

100

VDS=-20V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V,VGS=0V

TJ=55℃

-10

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-4.5V

VDS≦-5V,VGS=-2.5V

-6

-3

Drain-source On-Resistance

RDS(on)

VGS=-2.5V,ID=-2.0A

VGS=-4.5V,ID=-2.8A

0.080

0.120

Forward Transconductance

gfs

VDS=-5V,ID=-2.8V

6.5

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

5.8

Gate-Source Charge

Qgs

0.85

Gate-Drain Charge

Qgd

VDS=-6V

VGS=-4.5V

ID≣-2.8A

1.7

Input Capacitance

Ciss

415

Output Capacitance

Coss

223

Reverse Transfer

Capacitance

Crss

VDS=-6V

VGS=0V

F=1MHz

Turn-On Time

td(on)

Turn-Off Time

td(off)

VDD=-6V

RL=6Ω

ID=-1A

VGEN=-4.5V

RG=6Ω

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