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ST7407 Datasheet(PDF) 2 Page - Stanson Technology |
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ST7407 Datasheet(HTML) 2 Page - Stanson Technology |
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2 / 7 page ![]() ST7407 P Channel Enhancement Mode MOSFET -3.4A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 2 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ± 12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -2.3 -1.7 A Pulsed Drain Current IDM -6 A Continuous Source Current (Diode Conduction) IS -1.4 A Power Dissipation TA=25℃ TA=70℃ PD 0.35 0.22 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃ /W |
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