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STN8205D Datasheet(PDF) 2 Page - Stanson Technology |
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STN8205D Datasheet(HTML) 2 Page - Stanson Technology |
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2 / 6 page ![]() STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) ℃ Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS +/-20 V 5.0 Continuous Drain Current (TJ=150 ) ℃ TA=25℃ TA=70℃ ID 3.4 A Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction) IS 2 A 1.15 Power Dissipation TA=25℃ TA=70℃ PD 0.75 W Operation Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 /W ℃ |
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