FH2114 datasheet(1/1 Pages) MA-COM

Part #	FH2114

Description	RF Power MOSFET Transistor 75W, 30-90MHz, 24V

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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RF Power MOSFET Transistor

75W, 30-90MHz, 24V

M/A-COM Products

Released; RoHS Compliant

FH2114

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Package Outline

Features

• N-Channel enhancement mode device

• Meets CECOM drawing A3012711

• Designed for frequency hopping systems

• 30-90 MHz

• Lower capacitances for broadband operation

• Lower noise figure than bipolar devices

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Drain-Source Voltage

65

Gate-Source Voltage

20

Drain-Source Current

16

Power Dissipation

159

Junction Temperature

200

Storage Temperature

-55 to +150

Thermal Resistance

1.1

Symbol

VDS

VGS

IDS

PD

TJ

TSTG

θJC

Units

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 100.0 mA

Drain-Source Leakage Current

IDSS

-

2.0

mA

VGS = 24.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

4.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

7.2

V

VDS = 27.0 V , IDS = 1000.0 mA

Forward Transconductance

GM

1.6

-

S

VDS = 24.0 V , IDS = 1000.0 mA , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

210

pF

VDS = 30.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

160

pF

VDS = 30.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

25

pF

VDS = 30.0 V , F = 1.0 MHz

Power Gain

GP

13

-

dB

VDD = 24.0 V, IDQ = 1000 mA, POUT = 75.0 W F =88 MHz

Drain Efficiency

ŋD

65

-

%

VDD = 24.0 V, IDQ = 1000 mA, POUT = 75.0 W F =88 MHz

Load Mismatch Tolerance

VSWR-T

-

30:1

-

VDD = 24.0 V, IDQ = 1000 mA, POUT = 75.0 W F =88 MHz

LETTER

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

A

24.38

25.15

.960

990

B

18.29

18.54

.720

.730

C

21.36

21.74

.841

.856

D

12.60

12.85

.496

.506

E

5.33

5.59

.210

.220

F

5.08

5.33

.200

.210

G

3.81

4.06

.150

.160

H

3.10

3.15

.122

.128

J

2.51

2.67

.099

.105

K

4.06

4.57

.160

.180

L

6.68

7.49

.263

.295

M

.10

.15

.004

.005

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