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2SD2500 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SD2500 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SD2500 2006-11-22 2 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut−off Current ICBO VCB = 1500 V, IE = 0 ― ― 1 mA Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 10 µA Collector−Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 600 ― ― V hFE (1) VCE = 5 V, IC = 1 A 10 ― 30 DC Current Gain hFE (2) VCE = 5 V, IC = 6 4 ― 8 ― Collector−Emitter Saturation Voltage VCE (sat) IC = 6A IB = 1.5A ― ― 3 V Base−Emitter Saturation Voltage VBE (sat) IC = 6A IB = 1.5A ― 1.0 1.4 V Transition Frequency fT VCE = 10 V, IC = 0.1 A ― 1.7 ― MHz Collector Output Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 135 ― pF Storage Time tstg ― 7 11 Switching Time Fall Time tf ICP = 6A, IB1 (end) = 1.5A fH = 15.75kHz ― 0.35 0.7 µs MARKING Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. D2500 Part No. (or abbreviation code) |
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