TPC6601 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

TPC6601

2006-11-10

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −50 V, IE = 0

⎯

−100

Emitter cut-off current

IEBO

VEB = −7 V, IC = 0

⎯

−100

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0

−50

⎯

hFE (1)

VCE = −2 V, IC = −0.3 A

200

⎯

500

DC current gain

hFE (2)

VCE = −2 V, IC = −1.0 A

100

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −1.0 A, IB = −33 mA

⎯

−0.2

Base-emitter saturation voltage

VBE (sat)

IC = −1.0 A, IB = −33 mA

⎯

−1.1

Rise time

⎯

Storage time

tstg

⎯

250

⎯

Switching time

Fall time

See Figure 1 circuit diagram.

VCC ∼− −30 V, RL = 30 Ω

IB1 = −IB2 = −33 mA

⎯

Figure 1 Switching Time Test Circuit & Timing Chart

Circuit Configuration

Marking

IB2

IB1

μs

Output

Input

IB2

IB1

VCC

Duty cycle

< 1%

Part No.

(or abbreviation code)

H3A

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot code (month)

Lot No.

Pin #1

Lot code

(year)

Product-specific code

TPC6601 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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