TPC6604

2009-09-02

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

TPC6604

High-Speed Switching Applications

DC-DC Converter Applications

• High DC current gain

• High-speed switching

Characteristic

Symbol

Rating

Unit

Collector-base voltage

-50

V

Collector-emitter voltage

-50

V

Emitter-base voltage

-7

V

DC

-1

Collector current

(Note 1)

Pulse

-2

A

Base current

-0.1

A

DC

0.8

Collector power

dissipation

(Note 2)

t

= 10 s

1.6

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the junction temperature does not exceed 150°C

during use of the device.

Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1C

Weight: 0.011 g (typ.)