TPC8029 datasheet(3/7 Pages) TOSHIBA

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TPC8029

2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V

⎯

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

VGS = 4.5 V, ID = 9 A

⎯

5.0

7.0

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 9 A

⎯

2.9

3.8

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 9 A

⎯

Input capacitance

Ciss

⎯

2200

⎯

Reverse transfer capacitance

Crss

⎯

430

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

690

⎯

Rise time

⎯

Turn-ON time

ton

⎯

Fall time

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge 1

Qgs1

⎯

8.5

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 24 V, VGS = 10 V, ID = 18 A

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

Forward voltage (diode)

VDSF

IDR = 18 A, VGS = 0 V

⎯

−1.2

VDD ∼− 15 V

0 V

VGS

10 V

ID = 9 A

VOUT

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