MAC08BT1 Series

3–41

Motorola Thyristor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Repetitive Blocking Current

(VD = Rated VDRM Gate Open) TJ = 25°C

TJ = 110°C

IDRM

—

—

—

—

10

200

µA

µA

Maximum On-State Voltage (Either Direction)

(IT = 1.1 A Peak, TA = 25°C)

VTM

—

—

1.9

Volts

Maximum On-State Voltage (Either Direction)

(IT = 1.1 A Peak, TA = 25°C)

VTM

—

—

1.9

Volts

Gate Trigger Current (Continuous dc) All Quadrants

(VD = 7.0 Vdc, RL = 100 Ω)

IGT

—

—

10

mA

Gate Trigger Current (Continuous dc) All Quadrants

(VD = 7.0 Vdc, RL = 100 Ω)

IGT

—

—

10

mA

Holding Current (Either Direction)

(VD = 7.0 Vdc, Gate Open,

Initiating Current = 20 mA, Gate Open)

IH

—

—

5.0

mA

Gate Trigger Voltage (Continuous dc) All Quadrants

(VD = 7.0 Vdc, RL = 100 Ω)

VGT

—

—

2.0

Volts

Gate Trigger Voltage (Continuous dc) All Quadrants

(VD = 7.0 Vdc, RL = 100 Ω)

VGT

—

—

2.0

Volts

Critical Rate of Rise of Commutation Voltage

(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS

On-State Current Duration = 2.0 mS, VDRM = 200 V,

Gate Unenergized, TC = 110°C,

Gate Source Resistance = 150

Ω, See Figure 10)

dv/dtc

1.5

—

—

V/

µs

Critical Rate-of-Rise of Off State Voltage

(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)

dv/dt

10

—

—

V/

µs

Critical Rate-of-Rise of Off State Voltage

(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)

dv/dt

10

—

—

V/

µs

Figure 1. PCB for Thermal Impedance and

Power Testing of SOT-223

0.079

2.0

0.079

2.0

0.059

1.5

0.091

2.3

0.091

2.3

0.472

12.0

0.096

2.44

BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.

BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.

MATERIAL: G10 FIBERGLASS BASE EPOXY

0.984

25.0

0.244

6.2

0.059

1.5

0.059

1.5

0.096

2.44

0.096

2.44

0.059

1.5

0.059

1.5

0.15

3.8

inches

mm