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D313 Datasheet(PDF) 1 Page - Weitron Technology |
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D313 Datasheet(HTML) 1 Page - Weitron Technology |
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1 / 4 page  2SD313 WEITRON http://www.weitron.com.tw TO-220 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Rating Characteristics Symbol Min Max Unit ELECTRICAL CHARACTERISTICS Tstg TJ PD IC VEBO VCEO VCBO (TA=25ºC) Storage Temperature Junction Temperature Total Device Disspation Collector Current Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage BVCEO BVCBO 60 60 - - Max - - V V Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage IC=100µA, IE=0 IC=1mA, IB=0 BVEBO ICBO ICEO 5.0 - - V 100 - - µA 1.0 - - mA Emitter-Base Breakdown Voltage IE=100µA, IC=0 Collector Cut-Off Current VCB=60V, IE=0 Emitter-Cut-Off Current VEB=60V,IE=0 IEBO 100 - - µA Emitter-Cut-Off Current VEB=4.0V, IC=0 ˚C ˚C W W/˚C A V V V -55 to +150 +150 1.75 30 0.24 3.0 5.0 60 60 1. BASE 2. COLLECTOR 3. EMITTER NPN Silicon Epitaxial Power Transistor BASE 1 COLLECTOR 2 3 EMITTER Lead(Pb)-Free P b 1/4 06-Feb-07 * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 Features: TA=25°C TC=25°C Derate above 25°C |
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