MAC210 Series MAC210A Series

3–76

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.2

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

(VD = Rated VDRM, Gate Open) TJ = 25°C

TJ = +125°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage (Either Direction)

(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)

VTM

—

1.2

1.65

Volts

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

IGT

—

—

—

—

12

12

20

35

50

50

50

75

mA

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,

TJ = +125°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

—

—

0.2

0.2

0.9

0.9

1.1

1.4

—

—

2

2

2

2.5

—

—

volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 500 mA, TC = +25°C)

IH

—

6

50

mA

Turn-On Time

(Rated VDRM, ITM = 14 A)

(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)

tgt

—

1.5

—

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,

Gate Unenergized, TC = 70°C)

dv/dt(c)

—

5

—

V/

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise,

Gate Open, TC = +70°C)

dv/dt

—

100

—

V/

µs