TL431AM (chips)

3

PAD LAYOUT

Y

0,0

X

Chip si z e: 0, 81x 0, 76

P ad si z e : 94 x 94

Uni t

:

µm

PAD LOCATION

Unit:

µm

Pad No.

Pad Name

Description

X

Y

1

R

Reference

-314

-299

2

A

Anode

-75

-275

3

K

Cathode

231

-299

PHYSICAL CHARACTERISTIC

Wafer dia

100 mm (4")

* Wafer thickness

280 … 420

±20 µm

Scribe width

90

µm

Passivation

PSG

Backside metallization

Without

metallization

Min. lot yield

75%

Min. wafer yield

60%

* The wafer thickness small be specified in a PO or Contract

1

2

3