BUJD103AD datasheet(7/14 Pages) NXP

7 / 14 page

BUJD103AD_2

Product data sheet

Rev. 02 — 6 October 2009

7 of 14

NXP Semiconductors

BUJD103AD

NPN power transistor with integrated diode

[1]

Measured with half sine-wave voltage (curve tracer)

storage time

IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A;

RL =75 Ω; Tj = 25 °C; resistive load;

see Figure 13 and 14

-2.7

3.3

µs

IC =2A; IBon = 0.4 A; VBB =-5V; LB =1µH;

Tj = 25 °C; inductive load;

see Figure 15 and 16

-1.2

1.4

µs

IC =2A; IBon = 0.4 A; VBB =-5V; LB =1µH;

Tj = 100 °C; inductive load; see Figure 15

and 16

--1.8

µs

fall time

IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A;

RL =75 Ω; Tj = 25 °C; resistive load;

see Figure 17 and 14

0.3

0.35

µs

IC =2A; IBon = 0.4 A; VBB =-5V; LB =1µH;

Tj = 100 °C; inductive load; see Figure 15

and 16

120

IC =2A; IBon = 0.4 A; VBB =-5V; LB =1µH;

Tj 25 °C; inductive load;

see Figure 18 and 16

-30

Table 6.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 7.

Test circuit for collector-emitter sustaining

voltage

Fig 8.

Oscilloscope display for collector-emitter

sustaining voltage test waveform

001aab987

horizontal

300

6 V

vertical

oscilloscope

50 V

100

Ω to 200 Ω

30 Hz to 60 Hz

001aab988

VCE (V)

min

VCEOsus

(mA)

100

250

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