MMBT5089 datasheet(2/5 Pages) WEITRON

2 / 5 page

MHz

DC Current Gain

VCE = 5.0V, IC = 100µA

MMBT5088

MMBT5089

VCE= 5.0V, IC= 1.0mA

MMBT5088

MMBT5089

VCE= 5.0V, IC= 10mA

MMBT5088

MMBT5089

Collector-Emitter Saturation Voltage

IC = 100mA, IB = 1.0mA

Base-Emitter Saturation Voltage

IC = 10mA, IB = 1.0mA

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

On Characteristics

Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued)

Characteristics

Symbol

Unit

Min

Max

300

400

350

450

300

400

900

1200

0.5

0.8

WEITRON

http://www.weitron.com.tw

2/5

13-Jan-06

Current-Gain-Bandwidth Product

VCE= 5.0V, IC = 500µA, f=20MHz)

Small-signal Characteristics

Collector-Base Capacitance

VCB = 5.0V, IE = 0, f = 1.0MHz emitter guarded

Emitter-Base Capacitance

VEB = 0.5V, IC = 0, f = 1.0MHz collector guarded

Small-Signal Current Gain

VCE= 5.0V, IC=1.0 mA, f=1.0 kHz

MMBT5088

MMBT5089

Noise Figure

VCE = 5.0V, IC = 100 µA, RS=1.0k ohms, f=1.0kHz

MMBT5088

MMBT5089

Ccb

Ceb

hfe

350

450

4.0

3.0

2.0

1400

1800

IDEAL

TRANSISTOR

R S

Fig 1.Transistor Noise Model

MMBT5088

MMBT5089

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