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SSF2302 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF2302 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 7 page  SSF2302 D G S DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES ● V = 20V,I PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 2302 SSF2302 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID (25℃) 2.4 A ID (70℃) 1.7 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 10 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 140 /W ℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.65 0.95 1.2 V DS D = 2.4A 1 3 2 G D S 2302 < 115mΩ @ V RDS(ON) GS=2.5V < 60mΩ @ V RDS(ON) GS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ● Battery protection ● Load switch ● Power management SOT-23 top view ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.1 |
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