SSF3402

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

1

1.5

2.5

V

V =4.5V, I

GS

45

48

mΩ

Drain-Source On-State Resistance

V =10V, I

GS

26

30

mΩ

Forward Transconductance

g

V =5V,I

FS

DS

13

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

660

1050

PF

lss

Output Capacitance

90

PF

V =25V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

70

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

6

nS

d(on)

Turn-on Rise Time

20

nS

V =15V,I

DS

D

Turn-Off Delay Time

20

nS

=5A

V =10V,R

Turn-Off Fall Time

GS

3

nS

Total Gate Charge

Q

8.5

15

nC

g

Gate-Source Charge

1.5

nC

V =16V,I

Gate-Drain Charge

DS

3.2

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1.2A

1.2

V

SD

GS

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

v1.0