SSF3616

Gate-Body Leakage Current

I

V =±20V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.8

1.3

1.8

V

V =4.5V, I

GS

21

30

mΩ

Drain-Source On-State Resistance

V =10V, I

GS

16

18.5

mΩ

Forward Transconductance

g

V =15V,I

FS

DS

10

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

600

PF

lss

Output Capacitance

75

PF

V =15V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

45

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

4

nS

d(on)

Turn-on Rise Time

t

12

nS

r

Turn-Off Delay Time

22

nS

V =15V,V =10V,R

Turn-Off Fall Time

DS

GS

4

nS

Total Gate Charge

Q

12

nC

g

Gate-Source Charge

1.2

nC

V =15V,I

Gate-Drain Charge

DS

3.8

nC

Body Diode Reverse Recovery Time

T

13

nS

rr

Body Diode Reverse Recovery Charge

Q

7

nC

rr

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =3A

0.7

1.2

V

SD

GS

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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