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SSF4604 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

Part # SSF4604
Description  High Power and current handing capability
PDF  5 Pages
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Manufacturer  SILIKRON [Silikron Semiconductor Co.,LTD.]
Direct Link  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF4604 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD.

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SSF4604
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
4604
SSF4604
SOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
TA=25℃
6.9
-5
Continuous Drain Current
TA=70℃
ID
6.0
-4.0
A
Pulsed Drain Current (Note 1)
IDM
30
-20
A
TA=25℃
2.0
2.0
Maximum Power Dissipation
TA=70℃
PD
1.35
1.44
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150
℃
THERMAL CHARACTERISTICS
N-Ch
62.5
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
P-Ch
62.5
/W
℃
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DESCRIPTION
The SSF4604 uses advanced trench
technology MOSFET to provide excellent
and low gate charge. The
RDS(ON)
complementary MOSFET may be used
in power inverters, and other applications.
P-channel
N-channel
Schematic diagram
GENERAL FEATURES
G2
S2
G1
S1
4
3
2
1
D2
D2
D1
D1
5
6
7
8
4 604
●
N-Channel
V
= 30V,I
DS
D = 6.9A
< 44mΩ @ V
RDS(ON)
GS=4.5V
< 28mΩ @ V
RDS(ON)
GS=10V
●
P-Channel
V
= -30V,I
DS
D = -5A
< 87mΩ @ V
RDS(ON)
GS=-4.5V
Marking and pin Assignment
< 52mΩ @ V
RDS(ON)
GS=-10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
SOP-8 top view
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0


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