SSF4703 datasheet(2/5 Pages) SILIKRON

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SSF4703

©Silikron Semiconductor CO.,LTD.

http://www.silikron.com

v1.2

Schottky

Thermal Resistance, Junction-to-Ambient (Note 2)

RθJA

℃

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±8V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.45

-0.7

-1

VGS=-4.5V, ID=-3.4A

VGS=-2.5V, ID=-2.5A

120

Static Drain-Source On-Resistance

RDS(ON)

VGS=-1.8V, ID=-1.5A

133

160

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-3.4A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

540

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V,ID=-3.4A

VGS=-4.5V,RGEN=3Ω

Total Gate Charge

6.1

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

VDS=-10V,ID=-3.4A,VGS=-4.5V

1.6

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-1A

-0.83

-1

Diode Forward Current (Note 2)

-2

SCHOTTKY PARAMETERS

Forward Voltage Drop

IF=0.5A

0.39

0.5

Maximum reverse leakage current

Irm

VR=16V

0.1

Junction Capacitance

VR=10V

Schottky Reverse Recovery Time

trr

IF=1A, dI/dt=100A/μs

5.2

Schottky Reverse Recovery Charge

Qrr

IF=1A, dI/dt=100A/μs

0.8

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