SSF8822

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.5

0.8

1

V

V =10V, I

GS

16.4

21

V =4.5V, I

GS

19

24

21.7

28

Drain-Source On-State Resistance

R

mΩ

DS(ON)

V =2.5V, I

GS

25

32

V =1.8V, I

GS

36

50

Forward Transconductance

g

V =5V,I

FS

DS

24

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

630

PF

lss

Output Capacitance

160

PF

V =10V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

135

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

5.7

nS

d(on)

Turn-on Rise Time

t

11.5

nS

r

Turn-Off Delay Time

31.5

nS

DS

V =5V,R

Turn-Off Fall Time

GS

9.7

nS

Total Gate Charge

Q

9.3

nC

g

Gate-Source Charge

0.6

nC

V =10V,I

Gate-Drain Charge

DS

V =4.5V

GS

3.6

nC

Body Diode Reverse Recovery Time

trr

IF=7A, dI/dt=100A/µs

15.2

nS

nC

Body Diode Reverse Recovery Charge

Qrr

IF=7A, dI/dt=100A/µs

6.3

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1A

0.7

1

V

SD

GS

S

Diode Forward Current (Note 2)

I

2.5

A

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

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