MAC6071A,B MAC6073A,B MAC6075A,B

6

Motorola Thyristor Device Data

2.4

2.6

1.0

0.9

0.8

0.7

0.6

(di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms)

2.8

3.0

3.2

3.4

3.6

3.8

4.0

4.2

1.1

1.2

TJ = 110°C

100

°C

90

°C

GATE OPEN

Figure 13. Typical Exponential Static dv/dt

versus Peak Voltage, MT2(–)

Figure 14. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(–)

Figure 15. Critical Rate of Rise of

Commutating Voltage

14

12

10

8.0

6.0

VPK, PEAK VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

400

450

500

550

600

16

14

12

10

8.0

6.0

100

105

110

115

120

16

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

1N4007

200 V

0.1

mF

ADJUST FOR

dv/dt(c)

56

W

RS

CS

80 mHY

LL

MEASURE

I

1N914

2

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

CHARGE

CONTROL

5

mF

NON–POLAR

CL

1

51

G

CHARGE

TRIGGER

NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

VPK = 400 V

500 V

600 V

TJ = 100°C

110

°C

120

°C

RG–MT1 = 510 W

RG–MT1 = 510 W

(di dt)c +

6f I

TM

1000

f

+

1

2tw

tw

200 V