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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
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GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD750
0.5W POWER pHEMT
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
(pHEMT), featuring a 0.25
μmx750μm Schottky barrier gate, defined by high -reso-
lution stepper-based photolithography. The double recessed gate structure mini-
mizes parasitics to optimize performance. The epitaxial structure and processing
have been optimized for reliable high-power applications. The FPD750 also fea-
tures Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and
DFN packages.
27.5dBm Linear Output
Power at 12GHz
11.5dB Power Gain at 12GHz
14.5dB Max Stable Gain at
12GHz
38dBm OIP3
50% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Rev A1 DS090609
Package Style: Bare Die
FPD7500.5W
Power pHEMT
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Electrical Specifications
P1dB Gain Compression
26.5
27.5
dBm
VDS=8V, IDS=50% IDSS
Maximum Stable Gain (S21/S12)
13.5
14.5
dB
VDS=8V, IDS=50% IDSS
Power Gain at P1dB (G1dB)
10.5
11.5
dB
VDS=8V, IDS=50% IDSS
Power-Added Efficiency (PAE)
45
%
VDS=8V, IDS=50% IDSS, POUT=P1dB
OIP3
38
dBm
VDS=8V, IDS=50% IDSS
40
dBm
Matched for optimal power, tuned for best IP3
Saturated Drain-Source Current (IDSS)
185
230
280
mA
VDS=1.3V, VGS=0V
Maximum Drain-Source Current
(IMAX)
370
mA
VDS=1.3V, VGS≈+1V
Transconductance (GM)
200
ms
VDS=1.3V, VGS=0 V
Gate-Source Leakage Current (IGSO)10
μA
VGS=-5V
Pinch-Off Voltage (VP)
|1.0|
V
VDS=1.3V, IDS=0.36mA
Gate-Source Breakdown Voltage
(VBDGS)
|12.0|
|14.0|
V
IGS=0.75mA
Gate-Drain Breakdown Voltage
(VBDGD)
|14.5|
|16.0|
V
IGD=0.75mA
Thermal Resistivity (
θJC)
65
°C/W
VDS>6V
Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
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