Features
1 of 4
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD1500
1W POWER pHEMT
The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25
μmx1500μm Schottky barrier gate, defined by high -
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD1500 is also available
in the low-cost plastic SOT89 and DFN packages.
29dBm Linear Output Power
at 12GHz
9dB Power Gain at 12GHz
12.5dB Max Stable Gain at
12GHz
41dBm OIP3
35% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Rev A1 DS090612
Package Style: Bare Die
FPD15001W
Power pHEMT
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Power at P1dB Gain Compression
28.5
30.0
dBm
VDS=8V, IDS=50% IDSS
Maximum Stable Gain (S21/S12)
11.5
12.5
dB
VDS=8V, IDS=50% IDSS
Power Gain at P1dB
8.0
9.0
dB
VDS=8V, IDS=50% IDSS
PAE
45
%
VDS=8V, IDS=50% IDSS, POUT=P1dB
OIP3 from 15dB to 5dB below P1dB
41
dBm
VDS=8V, IDS=50% IDSS
43
dBm
Matched for optimal power, tuned for best IP3
Saturated Drain-Source Current (IDSS)
375
465
550
mA
VDS=1.3V, VGS=0V
Maximum Drain-Source Current
(IMAX)
750
mA
VDS=1.3V, VGS≈+1V
Transconductance
400
ms
VDS=1.3V, VGS=0 V
Gate-Source Leakage Current (IGSO)1
15
μAVGS=-5V
Pinch-Off Voltage (VP)
|0.7|
|1.0|
|1.3|
V
VDS=1.3V, IDS=1.5mA
Gate-Source Breakdown Voltage
(VBDGS)
|12.0|
|14.0|
V
IGS=1.5mA
Gate-Drain Breakdown Voltage
(VBDGD)
|14.5|
|16.0|
V
IGD=1.5mA
Thermal Resistivity (
θJC) *
42
°C/W
VDS>6V
Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
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