S9012 datasheet(1/2 Pages) DAYA

Part #	S9012

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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SOT-23 Plastic-Encapsulate Transistors

S9012

TRANSISTOR (PNP)

FEATURES

Complementary to S9013

Excellent hFE linearity

MARKING: 2T1

MAXIMUM RATINGS (TA=25

unless otherwise noted

℃

)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Power Dissipation

300

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-1V, IC= -50mA

120

400

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V,

IC= -20mA

f=30MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

5

pF

CLASSIFICATION OF hFE

Rank

L

H

J

Range

120-200

200-350

300-400

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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S9012 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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