8050S datasheet(1/2 Pages) DAYA

Part #	8050S

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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TO-92 Plastic-Encapsulate Transistors

8050S

TRANSISTOR (NPN)

FEATURES

Complimentary to 8550S

Collector current: IC=0.5A

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.5

A

PC

Collector Power Dissipation

0.625

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 0.1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 40 V ,

IE=0

0.1

μA

Collector cut-off current

ICEO

VCE= 20 V ,

IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

hFE(1)

VCE= 1V, IC= 50mA

85

400

DC current gain

hFE(2)

VCE= 1V, IC= 500mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

1.2

V

Transition frequency

fT

VCE= 6V, IC=20mA

f =30MHz

150

MHz

CLASSIFICATION OF

hFE(1)

Rank

B

C

D

D3

Range

85-160

120-200

160-300

300-400

1 2 3

TO-92

1.EMITTER

2.

COLLECTOR

3.

BASE

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8050S Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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