S8550 datasheet(1/2 Pages) DAYA

Part #	S8550

Description	TO-92 Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

SOT-23 Plastic-Encapsulate Transistors

S8550

TRANSISTOR (PNP)

FEATURES

Complimentary to S8050

Collector current: IC=0.5A

MARKING :

2TY

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.5

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC = -100μA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -40V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE= -20V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -3V, IC=0

-0.1

μA

hFE(1)

VCE= -1V, IC= -50mA

120

400

DC current gain

hFE(2)

VCE= -1V, IC= -500mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE= -6V, IC= -20mA

f=30MHz

150

MHz

CLASSIFICATION OF

hFE(1)

Rank

L

H

Range

120-200

200-350

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S8550 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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