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D882 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

Part # D882
Description  TO-92 Plastic-Encapsulate Transistors
PDF  2 Pages
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Manufacturer  DAYA [Daya Electric Group Co., Ltd.]
Direct Link  http://www.cndaya.com
Logo DAYA - Daya Electric Group Co., Ltd.

D882 Datasheet(HTML) 1 Page - Daya Electric Group Co., Ltd.

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TO-126 Plastic-Encapsulate Transistors
D882 TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS (TA=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
3
A
PD
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
unless otherwise specified)
℃
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 40 V, IE=0
1
µA
Collector cut-off current
ICEO
VCE= 30 V, IB=0
10
µA
Emitter cut-off current
IEBO
VEB= 6 V, IC=0
1
µA
DC current gain
hFE
VCE= 2 V, IC= 1A
60
400
Collector-emitter saturation voltage
VCE (sat)
IC= 2A, IB= 0.2 A
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC= 2A, IB= 0.2 A
1.5
V
Transition frequency
fT
VCE= 5V, IC=0.1A
f =10MHz
90
MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
1 2 3
TO-126
1. EMITTER
2. COLLECTOR
3. BASE


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