2N3906 datasheet(1/1 Pages) DAYA

Part #	2N3906

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

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TO-92 Plastic-Encapsulate Transistors

2N3906 TRANSISTOR (PNP)

FEATURE

PNP silicon epitaxial planar transistor for switching and

Amplifier applications

As complementary type, the NPN transistor 2N3904 is

Recommended

This transistor is also available in the SOT-23 case with

the type designation MMBT3906

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.2

A

PC

Collector Power Dissipation

0.625

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC = -10μA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1mA , IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -10μA, IC=0

-5

V

Collector cut-off

current

ICBO

VCB= -40 V,IE=0

-0.1

μA

Collector cut-off

current

ICEX

VCE= -30 V,VBE(off)=-3V

-50

nA

Emitter cut-off

current

IEBO

VEB= -5 V ,

IC=0

-0.1

μA

hFE1

VCE=-1 V, IC= -10mA

100

400

hFE2

VCE=-1 V, IC= -50mA

60

DC current gain

hFE3

VCE=-1 V, IC= -100mA

30

Collector-emitter saturation voltage

VCE(sat)

IC= -50mA, IB= -5mA

-0.4

V

Base-emitter saturation voltage

VBE(sat)

IC= -50mA, IB= -5mA

-0.95

V

Transition frequency

fT

VCE=-20V, IC= -10mA

f = 100MHz

250

MHz

Delay Time

td

35

ns

Rise Time

tr

VCC=-3V,VBE=-0.5V,

IC=-10mA,IB1=-1mA

35

ns

Storage Time

ts

225

ns

Fall Time

tf

VCC=-3V,Ic=-10mA

IB1=IB2=-1mA

75

ns

CLASSIFICATION OF hFE1

Rank

O

Y

G

Range

100-200

200-300

300-400

1 2 3

TO-92

1.EMITTER

2.BASE

3. COLLECTOR

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2N3906 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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