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IRFH7934PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH7934PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFH7934PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.9 3.5 ––– 4.2 5.1 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 110 ––– ––– S Qg Total Gate Charge ––– 20 30 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.5 ––– Qgd Gate-to-Drain Charge ––– 6.3 ––– Qgodr Gate Charge Overdrive ––– 6.4 ––– See Fig.17 & 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.8 ––– Qoss Output Charge ––– 15 ––– nC RG Gate Resistance ––– 1.7 3.1 Ω td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time ––– 16 ––– td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 7.5 ––– Ciss Input Capacitance ––– 3100 ––– Coss Output Capacitance ––– 623 ––– Crss Reverse Transfer Capacitance ––– 241 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 28 42 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 3.9 190 VDS = VGS, ID = 50μA ns pF nC nA μA Conditions ––– ––– ––– ––– Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 24A e VGS = 20V VGS = -20V MOSFET symbol VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 19A See Fig.15 Max. 97 TJ = 25°C, IF = 19A, VDD = 15V di/dt = 325A/μs eÃSee Fig.16 TJ = 25°C, IS = 19A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 19A e VGS = 4.5V Typ. ––– RG=1.8Ω VDS = 15V, ID = 19A VDS = 24V, VGS = 0V, TJ = 125°C m Ω VDS = 24V, VGS = 0V VDS = 15V ––– ID = 19A VGS = 0V VDS = 15V 19 ƒ = 1.0MHz |
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