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CSD16301Q2 Datasheet(PDF) 2 Page - Texas Instruments

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Part # CSD16301Q2
Description  N-Channel NexFET Power MOSFETs
PDF  10 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CSD16301Q2 Datasheet(HTML) 2 Page - Texas Instruments

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CSD16301Q2
SLPS235 – OCTOBER 2009.............................................................................................................................................................................................. www.ti.com
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
25
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
1
μA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/–8V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, IDS = 250μA
0.9
1.1
1.4
V
VGS = 3V, IDS = 4A
27
34
m
Ω
RDS(on)
Drain to Source On Resistance
VGS = 4.5V, IDS = 4A
23
29
m
Ω
VGS = 8V, IDS = 4A
19
24
m
Ω
gfs
Transconductance
VDS = 15V, IDS = 4A
16.5
S
Dynamic Characteristics
CISS
Input Capacitance
260
340
pF
COSS
Output Capacitance
VGS = 0V, VDS = 12.5V, f = 1MHz
165
215
pF
CRSS
Reverse Transfer Capacitance
13
17
pF
Rg
Series Gate Resistance
1.3
2.6
Ω
Qg
Gate Charge Total (4.5V)
2
2.8
nC
Qgd
Gate Charge – Gate to Drain
0.4
nC
VDS = 10V, IDS = 4A
Qgs
Gate Charge Gate to Source
0.6
nC
Qg(th)
Gate Charge at Vth
0.3
nC
QOSS
Output Charge
VDS = 12.5V, VGS = 0V
3
nC
td(on)
Turn On Delay Time
2.7
ns
tr
Rise Time
4.4
ns
VDS = 12.5V, VGS = 4.5V, IDS = 4A
RG = 2Ω
td(off)
Turn Off Delay Time
4.1
ns
tf
Fall Time
1.7
ns
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 4A, VGS = 0V
0.8
1
V
Qrr
Reverse Recovery Charge
VDD = 12.5V, IF = 4A, di/dt = 200A/μs
5.1
nC
trr
Reverse Recovery Time
VDD = 12.5V, IF = 4A, di/dt = 200A/μs
11
ns
THERMAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance Junction to Case(1)
8.4
°C/W
RθJA
Thermal Resistance Junction to Ambient(1) (2)
69
°C/W
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD16301Q2



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