2N5401 datasheet(1/2 Pages) DAYA

Part #	2N5401

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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TO-92 Plastic-Encapsulate Transistors

2N5401

TRANSISTOR (PNP)

FEATURE

Switching and amplification in high voltage

Applications such as telephony

Low current(max. 600mA)

High voltage(max.160v)

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.6

A

PC

Collector Power Dissipation

0.625

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA, IE=0

-160

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA, IB=0

-150

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -10μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -120 V, IE=0

-50

nA

Emitter cut-off current

IEBO

VEB= -3V, IC=0

-50

nA

hFE(1)

VCE= -5V, IC=-1 mA

80

hFE(2)

VCE= -5V, IC= -10 mA

60

240

DC current gain

hFE(3)

VCE= -5V, IC=-50 mA

50

Collector-emitter saturation voltage

VCE(sat)

IC= -50mA, IB= -5 mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC= -50mA, IB= -5 mA

-1

V

Transition frequency

fT

VCE=-5V,

IC=-10mA

f =30MHz

100

300

MHz

1 2 3

TO-92

1.EMITTER

2.BASE

3.COLLECTOR

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2N5401 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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