2SD1616A datasheet(1/2 Pages) DAYA

Part #	2SD1616A

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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TO-92 Plastic-Encapsulate Transistors

2SD1616A

TRANSISTOR (NPN)

FEATURE

Power dissipation

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

1

A

PC

Collector Power Dissipation

750

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 10μA , IE=0

120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 2mA , IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=6V, IC=0

0.1

μA

hFE1

VCE=2 V, IC= 100mA

135

600

DC current gain

hFE2

VCE=2 V, IC= 1A

81

Collector-emitter saturation voltage *

VCE(sat)

IC= 1A, IB=50mA

0.3

V

Base-emitter saturation voltage *

VBE(sat)

IC= 1A, IB=50mA

1.2

V

Base-emitter voltage

*

VBE

VCE= 2V, IC=50mA

0.6

0.7

V

Transition frequency

fT

VCE=2 V, IC= 100mA

100

MHz

Output capacitance

Cob

VCB=10 V,IE= 0, f=1MHz

19

pF

Turn on time

ton

0.07

μs

Storage time

tS

0.95

μs

Fall time

tF

Vcc=10V, IC=100mA,

IB1=-IB2=10mA

0.07

μs

*pulse test: PW≤350µS, δ≤2%.

CLASSIFICATION OF hFE1

Rank

L

K

U

Range

135-270

200-400

300-600

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BSAE

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2SD1616A Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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