MPS2907A datasheet(1/2 Pages) DAYA

Part #	MPS2907A

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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TO-92 Plastic-Encapsulate Transistors

MPS2907A

TRANSISTOR (PNP)

FEATURES

Complementary NPN Type available (MPS2222A)

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.6

A

PC

Collector Power Dissipation

0.625

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA,IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-10

n A

Collector cut-off current

ICEX

VCE=-30V,VEB(off)=-0.5V

-50

nA

Emitter cut-off current

IEBO

VEB=-3V,IC=0

-10

nA

hFE(1)

VCE=-10V,IC=-0.1mA

78

hFE(2)

VCE=-10V,IC=-150mA

100

300

DC current gain

hFE(3)

VCE=-10V,IC=-500mA

52

VCE(sat)

IC=-150mA,IB=-15mA

-0.4

V

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-0.67

V

VBE(sat)

IC=-150mA,IB=-15mA

-1

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA,IB=-50mA

-1.2

V

Transition frequency

fT

VCE=-20V,IC=-50mA,f=100MHz

200

MHz

Delay time

td

10

nS

Rise time

tr

VCC=-30V,Ic=-150mA,IB1=-15mA

25

nS

Storage time

tS

225

nS

Fall time

tf

VCC=-6V,Ic=-150mA,

IB1=IB2=-15mA

60

nS

CLASSIFICATION OF

hFE(2)

Rank

L

H

Range

100-200

200-300

1 2 3

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

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